Degradation Analysis of High Performance 14nm FinFET SRAM
Daniël Kraak1,a, Innocent Agbo1,b, Mottaqiallah Taouil1,c, Said Hamdioui1,d, Pieter Weckx 2,3,e, Stefan Cosemans2 and Francky Catthoor3,f
1Delft University of Technology Mekelweg CD Delft, The Netherlands
aD.H.P.Kraak@tudelft.nl
bI.O.Agbo@tudelft.nl
cM.Taouil@tudelft.nl
dS.Hamdioui@tudelft.nl
2imec vzw., Kapeldreef 75, Leuven, Belgium
ePieter.Weckx@imec.be
3Katholieke Universiteit Leuven, ESAT, Belgium
fFrancky.Catthoor@imec.be
ABSTRACT
Memory designs usually add design margins to compensate for chip aging; this may lead to yield and performance loss (in case of overestimation) or reduced reliability (in case of underestimation). This paper analyzes the impact of aging on cutting edge high performance 14nm FinFET SRAM using a calibrated aging model; it does not only analyze the impact of the SRAM's components individually, as it is the case in prior work, but it also investigates the contribution of the interaction of these components while considering different workloads; both the overall metric of the memory (i.e., the access time) as well as metrics of individual components (e.g., sensing delay for the sense amplifier) are examined. The results show that it is crucial to consider not only the aging of all individual components, but also their interaction in order to provide accurate prediction of aging effects; considering only aging of single/individual components leads to either too optimistic or pessimistic results. For example, using our approach (which includes the components interaction) results approximately in 9.1% degradation of memory access time (for three years of aging), while using the traditional approach (based on adding the impact of individual components) results in 7.3% increase only; a relative difference of 25%, for which the timing and the address decoder components are the main contributors. With respect to individual components, the sense amplifier is the most fragile one (e.g., its offset voltage spec. degrades up to 58%.)
Keywords: Reliability, aging, SRAM, FinFET.
