In-Memory Resistive RAM Implementation of Binarized Neural Networks for Medical Applications
Bogdan Penkovsky1, Marc Bocquet2, Tifenn Hirtzlin1, Jacques-Olivier Klein1, Etienne Nowak3, Elisa Vianello3, Jean-Michel Portal2 and Damien Querlioz1
1C2N, Université Paris-Saclay, CNRS, Palaiseau, France
2IM2NP, Aix-Marseille Université, Université de Toulon, CNRS, Marseille, France
3CEA, LETI, Grenoble, France
ABSTRACT
The advent of deep learning has considerably accelerated machine learning development. The deployment of deep neural networks at the edge is however limited by their high memory and energy consumption requirements. With new memory technology available, emerging Binarized Neural Networks (BNNs) are promising to reduce the energy impact of the forthcoming machine learning hardware generation, enabling machine learning on the edge devices and avoiding data transfer over the network. In this work, after presenting our implementation employing a hybrid CMOS - hafnium oxide resistive memory technology, we suggest strategies to apply BNNs to biomedical signals such as electrocardiography and electroencephalography, keeping accuracy level and reducing memory requirements. We investigate the memory-accuracy trade-off when binarizing whole network and binarizing solely the classifier part. We also discuss how these results translate to the edge-oriented Mobilenet V1 neural network on the Imagenet task. The final goal of this research is to enable smart autonomous healthcare devices.
