Floating Random Walk Based Capacitance Solver for VLSI Structures with Non-Stratified Dielectrics
Mingye Songa, Ming Yangb and Wenjian Yuc
BNRist, Dept. Computer Science & Technology, Tsinghua University, Beijing 100084, China
asongmy16@mails.tsinghua.edu.cn
byang-m17@mails.tsinghua.edu.cn
cyu-wj@tsinghua.edu.cn
ABSTRACT
In this paper, two techniques are proposed to enhance the floating random walk (FRW) based capacitance solver for handling non-stratified dielectrics in very large-scale integrated (VLSI) circuits. They follow an existing approach which employs approximate eight-octant transition cubes while simulating the structure with conformal dielectrics. Firstly, the symmetry property of the transition probabilities of the eightoctant cube is revealed and utilized to derive an on-the-fly sampling scheme during the FRWprocedure. This avoids the precharacterization, saves substantial memory, and improves computational accuracy for extracting the structure with non-stratified dielectrics. Then, the space management technique is extended to improve the runtime efficiency for simulating structures with thousands of non-stratified dielectrics. Numerical experiments are carried out to validate the proposed techniques and show their effectiveness for handling structures with conformal dielectrics and air bubbles. Moreover, the extended space management brings up to 1441⨯ speedup for handling structures with from several thousand to nearly one million non-stratified dielectrics.
Keywords: Capacitance Extraction, non-stratified Dielectric, Floating Random walk, Space Management.
