Three-Terminal MTJ-Based Nonvolatile Logic Circuits with Self-Terminated Writing Mechanism for Ultra-Low-Power VLSI Processor

Takahiro Hanyu1, Daisuke Suzuki2, Naoya Onizawa2 and Masanori Natsui1
1Research Institute of Electrical Communication, Tohoku University, Japan
2Frontier Research Institute for Interdisciplinary Science, Tohoku University, Japan


Magnetic-Tunnel Junction (MTJ)-based nonvolatile logic circuits have some possibility to solve the powerdissipation problem seriously focusing on the present CMOSonly-based VLSI processors. Three terminal MTJ devices are the promising candidate as nonvolatile storage device to realize such a nonvolatile logic circuit. However, its writing energy is still serious in comparison with conventional CMOS-only-based logic circuits. In this paper, a new MTJ-based nonvolatile logic circuit with self-terminated mechanism is proposed and its energy efficiency is evaluated in comparison with the corresponding previous work. In addition, some recent research topics related to MTJ-based nonvolatile logic-circuit design and its application, such as a computer-aided-design (CAD) tool considering a stochastic MTJ-switching behavior and the application to a resilient ``die-hard'' VLSI processor against sudden power-supply outage, are also demonstrated.

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