DESTINY: A Tool for Modeling Emerging 3D NVM and eDRAM caches
Matt Poremba1, Sparsh Mittal2,a, Dong Li2,b, Jeffrey S. Vetter2,3,c and Yuan Xie4
1Pennsylvania State University, USA.
2Oak Ridge National Laboratory, USA.
3Georgia Institute of Technology, USA
4University of California at Santa Barbara, USA.
The continuous drive for performance has pushed the researchers to explore novel memory technologies (e.g. non-volatile memory) and novel fabrication approaches (e.g. 3D stacking) in the design of caches. However, a comprehensive tool which models both conventional and emerging memory technologies for both 2D and 3D designs has been lacking. We present DESTINY, a microarchitecture-level tool for modeling 3D (and 2D) cache designs using SRAM, embedded DRAM (eDRAM), spin transfer torque RAM (STT-RAM), resistive RAM (ReRAM) and phase change RAM (PCM). DESTINT facilitates design-space exploration across several dimensions, such as optimizing for a target (e.g. latency or area) for a given memory technology, choosing the suitable memory technology or fabrication method (i.e. 2D v/s 3D) for a desired optimization target etc. DESTINY has been validated against industrial cache prototypes. we believe that DESTINY will drive architecture and system-level studies and will be useful for researchers and designers.
Keywords: Cache, SRAM, eDRAM, STT-RAM, ReRAM, PCM, Non-volatile memory (NVM or NVRAM, Modeling tool, Validation.
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