HReRAM: A Hybrid Reconfigurable Resistive Random-Access Memory
Miguel Angel Lastras-Montañoa, Amirali Ghofranib and Kwang-Ting Chengc
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA.
Passive crossbar arrays of memristors have been identified as excellent alternatives for future random-access memories. One limitation is their inability of selecting a memory cell without the interference caused by the sneak-path currents from other partially selected cells, as it results not only in unnecessary waste of energy but also in larger current requirements. The complementary resistive switch (CRS), consisting in two anti-serially connected memristors, is considered a potential solution to the sneak-path problem. However, the destructive read operation and reduced endurance of the CRS render it unattractive for the otherwise excellent candidate for next-generation crossbar-based non-volatile memories. In this paper we explore the feasibility and tradeoffs of configuring part of the CRS memory into a memristive mode to mitigate these limitations. The inherent locality of memory accesses for most computer programs offers an opportunity for designing a cache-like adaptive CRS-based crossbar memory with hybrid configurations of CRS and memristive modes, enabling optimization for both endurance and energy consumption. Our simulation results validate that the proposed hybrid system achieves 1.5-7x reduction in energy consumption in comparison with a memristive-only memory system and significantly improves the endurance of the CRS-based memory.
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