Date: Thursday 12 March 2015
Time: 11:00 - 12:30
Location / Room: Belle Etoile
Chair:
Luca Perniola, CEA-Leti, FR
Co-Chair:
Pierre-Emmanuel Gaillardon, École Polytechnique Fédérale de Lausanne (EPFL), CH
Memories are of utmost importance in modern electronic systems. Emerging memory technologies hold a lot of promise to further integration density and performance levels, while reducing energy consumption. In this session, the first two papers introduce innovative solutions for better control of the endurance limitations of novel memories, while the last two papers investigate the gains in performance metrics from a system-level perspective.
| Time | Label | Presentation Title Authors |
|---|---|---|
| 11:00 | 10.2.1 | HRERAM: A HYBRID RECONFIGURABLE RESISTIVE RANDOM-ACCESS MEMORY Speakers: Miguel Angel Lastras-Montaño, Amirali Ghofrani and Kwang-Ting Cheng, UC Santa Barbara, US Abstract Passive crossbar arrays of memristors have been identified as excellent alternatives for future random-access memories. One limitation is their inability of selecting a memory cell without the interference caused by the sneak-path currents from other partially selected cells, as it results not only in unnecessary waste of energy but also in larger current requirements. The complementary resistive switch (CRS), consisting in two anti-serially connected memristors, is considered a potential solution to the sneak-path problem. However, the destructive read operation and reduced endurance of the CRS render it unattractive for the otherwise excellent candidate for next-generation crossbar-based non-volatile memories. In this paper we explore the feasibility and tradeoffs of configuring part of the CRS memory into a memristive mode to mitigate these limitations. The inherent locality of memory accesses for most computer programs offers an opportunity for designing a cache-like adaptive CRS-based crossbar memory with hybrid configurations of CRS and memristive modes, enabling optimization for both endurance and energy consumption. Our simulation results validate that the proposed hybrid system achieves 1.5-7x reduction in energy consumption in comparison with a memristive-only memory system and significantly improves the endurance of the CRS-based memory. Download Paper (PDF; Only available from the DATE venue WiFi) |
| 11:30 | 10.2.2 | NCODE: LIMITING HARMFUL WRITES TO EMERGING MOBILE NVRAM THROUGH CODE SWAPPING Speakers: Kan Zhong, Duo Liu, Linbo Long, Xiao Zhu, Weichen Liu, Qingfeng Zhuge and Edwin Sha, Chongqing University, CN Abstract Mobile applications are becoming more and more powerful but also dependent on large main memories, which consume a large portion of system energy. Swapping to byte-addressable, non-volatile memory (NVRAM) is a promising solution to this problem. However, most NVRAMs have limited write endurance. To make it practical, the design of an NVRAM based swapping system must also consider endurance. In this paper, we target at prolonging the lifetime of NVRAM based swap area in mobile devices. Different form traditional wisdom, such as wear leveling and hot/cold data identification, we propose to build a system called nCode, which exploits the fact that code pages are easy to identify, read-only, and therefore a perfect candidate for swapping. Utilizing NVRAM's byte-addressability, we support execute-in-place (XIP) of the code pages in the swap area, without copying them back to DRAM based main memory. Experimental results based on the Google Nexus 5 smartphone show that nCode can effectively prolong the lifetime of NVRAM under various workloads. Download Paper (PDF; Only available from the DATE venue WiFi) |
| 12:00 | 10.2.3 | SYSTEM LEVEL EXPLORATION OF A STT-MRAM BASED LEVEL 1 DATA-CACHE Speakers: Manu Komalan1, Jose Ignacio Gomez2, Christian Tenllado2, Francisco Tirado Fernandez2 and Francky Catthoor3 1imec, UCM(Universidad Complutense de Madrid), ES; 2Universidad Complutense de Madrid, ES; 3IMEC, BE Abstract Since Non-Volatile Memory (NVM) technologies are being explored extensively nowadays as viable replacements for SRAM based memories in LLCs and even L2 caches, we try to take stock of their potential as level 1 (L1) data caches. These NVMs like Spin Torque Transfer RAM(STT-MRAM), Resistive-RAM(ReRAM) and Phase Change RAM (PRAM) are not subject to leakage problems with technology scaling. They also show significant area gains and lower dynamic power consumption. A direct drop-in replacement of SRAM by NVMs is, however, still not feasible due to a number of shortcomings, with latency (write or read) and/or endurance/reliability among them being the major issues. STT-MRAM is increasingly becoming the NVM of choice for high performance and general purpose embedded platforms due to characteristics like low access latency, low power and long lifetime. With advancements in cell technology, and taking into account the stringent reliability and performance requirements for advanced technology nodes, the major bottleneck to the use of STT-MRAM in high level caches has become read latency (instead of write latency as previously believed). The main focus of this paper is the exploration of read penalty issues in a NVM based L1 Data cache (D-cache) for an ARM like single core general purpose system. We propose a design method for the STT-MRAM based D-cache in such a platform. This design addresses the adverse effects due to the STT-MRAM read penalty issues by means of micro-architectural modifications along with code transformations. According to our simulations, the proposed modifications can effectively reduce the performance penalty introduced by the NVM (initially ~54%) to extremely tolerable levels (~8%). Download Paper (PDF; Only available from the DATE venue WiFi) |
| 12:15 | 10.2.4 | HIGH PERFORMANCE AXI-4.0 BASED INTERCONNECT FOR EXTENSIBLE SMART MEMORY CUBES Speakers: Erfan Azarkhish1, Igor Loi1, Davide Rossi1 and Luca Benini2 1Università di Bologna, IT; 2Università di Bologna / Swiss Federal Institute of Technology in Zurich (ETHZ), CH Abstract The recent technological breakthrough represented by the Hybrid Memory Cube is on its way to improve bandwidth, power consumption, and density. This is while heterogeneous 3D integration has provided another opportunity for revisiting near memory computation to fill the gap between the processors and memories even further. In this paper, we take the first step towards a "Smart Memory Cube (SMC)", a fully backward compatible and modular extension to the standard HMC, supporting near memory computation on its Logic Base (LoB), through a high performance interconnect designed for this purpose. The main feature of SMC is the high bandwidth, low latency, and AXI-4.0 compatible interconnect. This interconnect is designed to serve the huge bandwidth demand by HMC's serial links, and to provide extra bandwidth to a processor-in-memory (PIM) embedded in the Logic Base (LoB). Our results obtained from cycle accurate simulation demonstrate that the interconnect can easily meet the demands of current and future projections of HMC (Up to 87GB/s READ bandwidth with 4 serial links and 16 memory vaults, and 175GB/s with 8 serial links and 32 memory vaults, for injected random traffic). Moreover, the interference between the PIM traffic and the main links was found to be negligible with execution time increase of less than 5%, and average memory access time increase of less than 15% when 56GB/s bandwidth is requested by the main links and 15GB/s bandwidth is delivered to the PIM port. Moreover, preliminary logic synthesis with Synopsys Design Compiler confirms that our interconnect is implementable and realistic. Download Paper (PDF; Only available from the DATE venue WiFi) |
| 12:30 | IP5-1, 673 | TOWARDS SYSTEMATIC DESIGN OF 3D PNML LAYOUTS Speakers: Robert Perricone1, Yining Zhu2, Katherine Sanders1, X. Sharon Hu1 and Michael Niemier1 1University of Notre Dame, US; 2Zhejiang University, CN Abstract Nanomagnetic logic (NML) is a ``beyond-CMOS'' technology that uses bistable magnets to store, process, and move binary information. Compared to CMOS, NML has several advantages such as non-volatility, lower power consumption, and radiation hardness. Recently, NML devices with perpendicular magnetic anisotropy (pNML) have been experimentally demonstrated to perform logic operations in three dimensions. 3D pNML layouts provide additional benefits such as simplified signal routing and greater integration density. However, designing functional 3D pNML circuits can be challenging as one must consider the effects of fringing magnetic fields in three dimensions. Furthermore, the current process of designing 3D pNML layouts is little more than a trial-and-error-based approach, which is infeasible for larger, more complex designs. In this paper, we propose a systematic approach to designing 3D pNML layouts. Our design process leverages a machine learning-inspired prediction approach that examines the effects of varying individual device parameters (e.g., length, width, etc.) and predicts functional configurations. Download Paper (PDF; Only available from the DATE venue WiFi) |
| 12:31 | IP5-2, 733 | DESTINY: A TOOL FOR MODELING EMERGING 3D NVM AND EDRAM CACHES Speakers: Matt Poremba1, Sparsh Mittal2, Dong Li2, Jeffrey Vetter3 and Yuan Xie4 1Pennsylvania State University, US; 2Oak Ridge National Lab, US; 3Oak Ridge National Lab and Georgia Institute of Technology, US; 4University of California, Santa Barbara, US Abstract The continuous drive for performance has pushed the researchers to explore novel memory technologies (e.g. non-volatile memory) and novel fabrication approaches (e.g. 3D stacking) in the design of caches. However, a comprehensive tool which models both conventional and emerging memory technologies for both 2D and 3D designs has been lacking. We present DESTINY, a microarchitecture-level tool for modeling 3D (and 2D) cache designs using SRAM, embedded DRAM (eDRAM), spin transfer torque RAM (STT-RAM), resistive RAM (ReRAM) and phase change RAM (PCM). DESTINY facilitates design-space exploration across several dimensions, such as optimizing for a target (e.g. latency or area) for a given memory technology, choosing the suitable memory technology or fabrication method (i.e. 2D v/s 3D) for a desired optimization target etc. DESTINY has been validated against industrial cache prototypes. We believe that DESTINY will drive architecture and system-level studies and will be useful for researchers and designers. Download Paper (PDF; Only available from the DATE venue WiFi) |
| 12:30 | End of session Lunch Break, Keynote lecture from 1320 - 1350 (Room Oisans) in Les Écrins Coffee Break in Exhibition AreaOn all conference days (Tuesday to Thursday), coffee and tea will be served during the coffee breaks at the below-mentioned times in the exhibition area. Lunch BreakOn Tuesday and Wednesday, lunch boxes will be served in front of the session room Salle Oisans and in the exhibition area for fully registered delegates (a voucher will be given upon registration on-site). On Thursday, lunch will be served in Room Les Ecrins (for fully registered conference delegates only). Tuesday, March 10, 2015Coffee Break 10:30 - 11:30 Lunch Break 13:00 - 14:30; Keynote session from 13:20 - 14:20 (Room Oisans) sponsored by Mentor Graphics Coffee Break 16:00 - 17:00 Wednesday, March 11, 2015Coffee Break 10:00 - 11:00 Lunch Break 12:30 - 14:30, Keynote lectures from 12:50 - 14:20 (Room Oisans) Coffee Break 16:00 - 17:00 Thursday, March 12, 2015Coffee Break 10:00 - 11:00 Lunch Break 12:30 - 14:00, Keynote lecture from 13:20 - 13:50 Coffee Break 15:30 - 16:00 |