Date: Wednesday 26 March 2014
Time: 17:00 - 18:30
Location / Room: Exhibition Theatre
Organiser:
Saibal Mukhopadhyay, Georgia Institute of Technology, US
Chair:
Arijit Raychowdhury, Georgia Institute of Technology, US
Co-Chair:
Saibal Mukhopadhyay, Georgia Institute of Technology, US
With conventional CMOS scaling becoming increasingly challenging, the designers wonder what opportunities and challenges exist beyond-CMOS for both Boolean and non-Boolean computing. This session will discuss three very different and promising emerging technologies -- Tunneling Field-Effect Transistor, Spintronics, and nano-electro-mechanical switches (NEMS) -- for low-power electronics. The talks will discuss the need for innovating and evaluating new circuit and system design methods as new device technologies emerge.
| Time | Label | Presentation Title Authors |
|---|---|---|
| 17:00 | 8.8.1 | ULTRA-LOW POWER ELECTRONICS WITH SI/GE TUNNEL FET Speakers: Amit Trivedi, Mohammad Faisal Amir and Saibal Mukhopadhyay, Georgia Institute of Technology, US Abstract Si/Ge Tunnel FET (TFET) with its subthermal subthreshold swing is attractive for low power analog and digital designs. Greater Ion/Ioff ratio of TFET can reduce the dynamic power in digital designs, while higher gm/IDS can lower the bias power of analog amplifier. However, the above benefits of TFET are eclipsed by MOSFET at a higher power/performance point. Ultra low power scalability of the key analog and digital circuits, SRAM and operational transconductance amplifier (OTA), with TFET is demonstrated. Analyzing a TFET based cellular neural network, this work shows the feasibility of ultra-low-power neuromorphic computing with TFET. |
| 17:30 | 8.8.2 | BRAIN-INSPIRED COMPUTING WITH SPIN TORQUE DEVICES Speakers: Kaushik Roy, Mrigank Sharad, Deliang Fan and Karthik Yogendra, Purdue University, US Abstract In this paper we discuss the potential of emerging spin-torque devices for computing applications. Recent proposals for spin-based computing schemes may be differentiated as 'all-spin' vs. hybrid, programmable vs. fixed, and, Boolean vs. non-Boolean. All-spin logic-styles may offer high area-density due to small form-factor of nano-magnetic devices. However, circuit and system-level design techniques need to be explored that leaverage the specific spin-device characterisitcs to achieve energy-efficiency, performance and reliability comparable to those of CMOS. The non-volatility of nano-magnets can be exploited in the design of energy and area-efficient programmable logic. In such logic-styles, spin-devices may play the dual-role of computing as well as memory-elements that provide field-programmability. Spin-based threshold logic design is presented as an example. Emerging spintronic phenomena may lead to ultra-low-voltage, current-mode, spin-torque switches that can offer attractive computing capabilities, beyond digital switches. Such devices may be suitable for non-Boolean data-processing applications which involve analog processing. Integration of such spin-torque devices with charge-based devices like CMOS and resistive memory can lead to highly energy-efficient information processing hardware for applicatons like pattern-matching, neuromorphic-computing, image-processing and data-conversion. Finally, we discuss the possibility of using coupled spin-torque nano oscillators for low-power non-Boolean computing. |
| 18:00 | 8.8.3 | TOWARD ULTRALOW-POWER COMPUTING AT EXTEME WITH SILICON CARBIDE (SIC) NANOELECTROMECHANICAL LOGIC Speakers: Swarup Bhunia1, Vaishnavi Ranganathan2, Tina He2, Srihari Rajgopal2, Rui Wang2, Mehran Mehregany2 and Philip Feng2 1Case Western Reserve University, US; 2Case Western Reserve U., US Abstract Growing number of important application areas, including automotive and industrial applications as well as space, avionics, combustion engine, intelligent propulsion systems, and geo-thermal exploration require electronics that can work reliable at extreme conditions - in particular at a temperature > 250°C and at high radiation (1-30 Mrad), where conventional electronics fail to work reliably. Traditionally, existing wide-band-gap semiconductors, e.g., silicon carbide (SiC) transistor-based electronics have been considered most viable for high temperature and high radiation applications. However, the large-size, high threshold voltage, low switching speed and high leakage current make logic design with these devices unattractive. Additionally, the leakage current markedly increases at high temperature (in the range of 10 µA for a 2-input NAND gate), which induces self-heating effect and makes power delivery at high temperature very challenging. To address these issues, in this paper we present a computing platform for low-power reliable operation at extreme environment using SiC electromechanical switches. We show that a device-circuit-architecture co-design approach can provide reliable long-term operation with virtually zero leakage power. |
| 18:30 | End of session | |
| 19:30 | DATE Party in "Gläserne Manufaktur" of the Volkswagen AG The DATE Party is again scheduled on the second conference day, Wednesday, March 26, 2014, starting from 19:30 h. This year, it will take place in one of Dresden's most exciting and modern buildings, the "Gläserne Manufaktur" of the car manufacturer Volkswagen AG (www.glaesernemanufaktur.de/en/). The party will feature a flying buffet style dinner with various catering points and accompanying drinks. Light background music and the possibility of guided visits through the extraordinary premises will round off the evening. It provides a perfect opportunity to meet friends and colleagues in a relaxed atmosphere while enjoying local amenities. Please kindly note that it is no seated dinner. All delegates, exhibitors and their guests are encouraged to attend the party. Please be aware that entrance is only possible with a party ticket. Each full conference registration includes a ticket for the DATE Party. Additional tickets can be purchased on-site at the registration desk (subject to availability of tickets). Ticket price for the full Evening Social Programme: 75 € per person. |